6 : , 7 & + , 1 * ' l r g h v maximum ratings and electrical characteristics, single diode @t a =25 ?? parameter symbol limits unit peak reverse voltage v rm 90 v dc reverse voltage v r 80 v peak forward current i fm 225 ma mean rectifying current i o 100 ma surge current (1s) i surge 500 ma junction temperature t j 125 ?? storage temperature t stg -55~+125 ?? electrical ratings @t a =25 ?? parameter symbol min. typ. max. unit conditions forward voltage v f 1.2 v i f =100ma reverse current i r 0.1 |a v r =80v capacitance between terminals c t 3.0 pf v r =0.5v,f=1mhz reverse recovery time t rr 4 ns v r =6v,i f =10ma,r l =100 |? sod-523 dimensions in inches and (millimeters) .043(1.10) .051(1.30) .035(0.90) .028(0.70) .067(1.70) .059(1.50) .006(0.15)min. .028(0.70) .020(0.50) .014(0.35) .009(0.25) .008(0.20) .002(0.05) 6 6 ? applications high speed switching ? features 1) extremely small surface mounting type. 2) high speed. 3) high reliability. ? construction silicon epitaxial planar 2012-10 willas electronic corp. device marking shipping 3000/tape&reel 1SS400-tg a ordring information
2012-10 willas electronic corp. 6 6 1 100m 10m 1m 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 forward voltage : v f (v) fig.1 forward characteristics 10 5 2 1 0.5 0.2 0.1 electrical characteristic curves (ta = 25c) forward current : i f (a) 1m 0.1m 10 1 100n 10n 1n 0 20 40 60 80 100 120 reverse voltage : v r (v) fig.3 capacitance between terminals reverse voltage : v r (v) fig.2 reverse characteristics reverse current : i r (a) 02 4 6 8101214 3 2 1 0 0.1 1 10 100 1000 10,000 capacitance between terminals : c t (pf) reverse recovery time : t rr (ns) forward current : i f (ma) fig.4 reverse recovery time characteristics 100 50 20 10 5 2 1 01 02 03 0 surge current : i surge (a) pulse width : t w (ms) fig.5 surge current characteristics pulse generator output 50 ? sampling oscilloscope 50 ? fig.6 reverse recovery time (t rr ) measurement circuit 5k ? 0.01 f d.u.t.
|
